首頁 >IHW30N100RXK>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-TypeFixedAttenuator | MINI Mini-Circuits | MINI | ||
LowLossIGBT:IGBTinTrenchStopandFieldstoptechnology LowLossIGBT:IGBTinTrenchStop?andFieldstoptechnology ?TrenchStop?andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat ?Designedf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ReverseConductingIGBTwithmonolithicbodydiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=450mΩ(Max)@VGS=20V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·TemperatureandLightingControls | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFETswithExtendedFBSOA | IXYS IXYS Corporation | IXYS | ||
PowerMOSFETswithExtendedFBSOA | IXYS IXYS Corporation | IXYS | ||
N-ChannelPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON |
詳細(xì)參數(shù)
- 型號:
IHW30N100RXK
- 制造商:
Infineon Technologies AG
- 功能描述:
Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-247
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
INFINEON |
23+ |
7000 |
詢價(jià) | ||||
INFINEON
|
10+ |
主營模塊 |
500 |
原裝正品,絕對正品,現(xiàn)貨供應(yīng) |
詢價(jià) | ||
INFINEON |
24+ |
PG-TO247-3 |
8866 |
詢價(jià) | |||
INFINEON |
23+ |
TO247 |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
2018+ |
TO220 |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
MAXIM |
23+ |
DIP-8 |
6500 |
全新原裝假一賠十 |
詢價(jià) | ||
INFINEO |
18+ |
TO-247 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO220 |
41500 |
原裝正品現(xiàn)貨 |
詢價(jià) |
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