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IRF320LSPBF

HEXFET?PowerMOSFET

VDSS=55V RDS(on)=8.0m? ID=110A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRF

International Rectifier

IRFD320

0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET

Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

Intersil

Intersil Corporation

IRFD320

PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A)

VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD320

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD320PBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A)

VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD320PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE320

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE320

SimpleDriveRequirements

IRF

International Rectifier

IRFF320

2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET

2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
HP
20+
QFP
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
HP
24+
QFP
35210
一級代理/放心采購
 詢價
HP
23+
QFP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HP
23+
QFP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
更多IFW320供應(yīng)商 更新時間2025-4-14 18:32:00

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