IDT7M1001S35CB中文資料IDT數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION:

The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 high-speed CMOS Dual-Port Static RAM module constructed on a multilayer ceramic substrate using eight IDT7006 (16K x 8) Dual-Port RAMs and two IDT FCT138 decoders or depopulated using only four IDT7006s and two decoders.

This module provides two independent ports with separate control, address, and I/O pins that permit independent and asynchronous access for reads or writes to any location in memory.

FEATURES

? High-density 1M/512K CMOS Dual-Port Static RAM module

? Fast access times:

—Commercial 35, 40ns

—Military 40, 50ns

? Fully asynchronous read/write operation from either port

? Full on-chip hardware support of semaphore signaling between ports

? Surface mounted LCC (leadless chip carriers) components on a 64-pin sidebraze DIP (Dual In-line Package)

? Multiple Vcc and GND pins for maximum noise immunity

? Single 5V (±10) power supply

? Input/outputs directly TTL-compatible