首頁(yè) >IDT71V67703S75BQ>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V67703S75BQ | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect | IDT Integrated Device Technology, Inc. | IDT | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號(hào):
IDT71V67703S75BQ
- 功能描述:
IC SRAM 9MBIT 75NS 165FBGA
- RoHS:
否
- 類(lèi)別:
集成電路(IC) >> 存儲(chǔ)器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
72
- 系列:
- 格式 -
- 存儲(chǔ)器:
RAM
- 存儲(chǔ)器類(lèi)型:
SRAM - 同步
- 存儲(chǔ)容量:
9M(256K x 36)
- 速度:
75ns
- 接口:
并聯(lián)
- 電源電壓:
3.135 V ~ 3.465 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
100-LQFP
- 供應(yīng)商設(shè)備封裝:
100-TQFP(14x14)
- 包裝:
托盤(pán)
- 其它名稱(chēng):
71V67703S75PFGI
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
165-CABGA(13x15) |
36430 |
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢(xún)價(jià) | ||
IDT |
2021+ |
1931 |
只做原裝假一罰十 |
詢(xún)價(jià) | |||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
IDT |
24+ |
165-FBGA |
4220 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
XILINX |
TQFP |
1680 |
只做進(jìn)口原裝!假一罰十!絕對(duì)有貨! |
詢(xún)價(jià) | |||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
IDT |
21+ |
165CABGA (13x15) |
13880 |
公司只售原裝,支持實(shí)單 |
詢(xún)價(jià) | ||
IDT |
23+ |
QFN |
10000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
IDT |
23+ |
QFN |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢(xún)價(jià) |
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