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IDT71T75802S133PFI

512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

IDT

Integrated Device Technology, Inc.

IDT71T75802S133PFI

包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71T75802S133PFI8

包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71T75802S133BG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75802S133BG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133BGG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133BGG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75802S133BGGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75802S133BGGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133BGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133BGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75802S133PFG

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133PFG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

71T75802S133PFGI

512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71T75802S133PFGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75802S133BG

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75802S133BGI

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

IDT71T75802S133PF

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IDT71T75802S133PFI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR(ZBT)

  • 存儲容量:

    18Mb(1M x 18)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    2.375V ~ 2.625V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商器件封裝:

    100-TQFP(14x14)

  • 描述:

    IC SRAM 18MBIT PARALLEL 100TQFP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
100TQFP
9526
詢價
IDT
23+
100-TQFP(14x14)
39257
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
07+
100
全新進口原裝現(xiàn)貨-軍工器件供應(yīng)商
詢價
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級代理/放心采購
詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
100TQFP
13880
公司只售原裝,支持實單
詢價
IDT
23+
100TQFP
9000
原裝正品,支持實單
詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
更多IDT71T75802S133PFI供應(yīng)商 更新時間2024-12-28 14:00:00