首頁 >IDT71T75802S133PFI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71T75802S133PFI | 512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | |
IDT71T75802S133PFI | 包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲器 描述:IC SRAM 18MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT71T75802S133PFI
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR(ZBT)
- 存儲容量:
18Mb(1M x 18)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
2.375V ~ 2.625V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應(yīng)商器件封裝:
100-TQFP(14x14)
- 描述:
IC SRAM 18MBIT PARALLEL 100TQFP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
100TQFP |
9526 |
詢價 | |||
IDT |
23+ |
100-TQFP(14x14) |
39257 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
07+ |
100 |
全新進口原裝現(xiàn)貨-軍工器件供應(yīng)商 |
詢價 | ||||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
20+ |
QFP-100 |
1001 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IDT |
22+ |
100TQFP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT |
21+ |
100TQFP |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IDT |
23+ |
100TQFP |
9000 |
原裝正品,支持實單 |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
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