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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IDT7164L25YI	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：28-BSOJ（0.300"，7.62mm 寬）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 64KBIT PARALLEL 28SOJ	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT7164L25YI8	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：28-BSOJ（0.300"，7.62mm 寬）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 64KBIT PARALLEL 28SOJ	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
7164L25DB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164L25DGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164L25TDB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164L25TDGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164L25TPGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
7164L25YG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164L25YGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
7164L25YGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25D	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25DB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25P	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25PB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25TD	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25TDB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25TP	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25TPB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25Y	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT
IDT7164L25YB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號(hào)：
IDT7164L25YI
制造商：
Renesas Electronics America Inc
類(lèi)別：
集成電路（IC） > 存儲(chǔ)器
包裝：
管件
存儲(chǔ)器類(lèi)型：
易失
存儲(chǔ)器格式：
SRAM
技術(shù)：
SRAM - 異步
存儲(chǔ)容量：
64Kb（8K x 8）
存儲(chǔ)器接口：
并聯(lián)
寫(xiě)周期時(shí)間 - 字，頁(yè)：
25ns
電壓 - 供電：
4.5V ~ 5.5V
工作溫度：
-40°C ~ 85°C（TA）
安裝類(lèi)型：
表面貼裝型
封裝/外殼：
28-BSOJ（0.300"，7.62mm 寬）
供應(yīng)商器件封裝：
28-SOJ
描述：
IC SRAM 64KBIT PARALLEL 28SOJ

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市昌和盛利電子有限公司	IDT7164L25YI	IDT	23+	28SOJ300MIL	9526		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IDT7164L25YI	IDT	23+	28-SOJ	36430	專業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!	詢價(jià)
瀚佳科技(深圳)有限公司	IDT7164L25YI	IDT, Integrated Device Technol	24+	28-SOJ	56200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市興燦科技有限公司	IDT7164L25YI	IDT	24+	28SOJ	4965	原裝現(xiàn)貨	詢價(jià)
深圳市科雨電子有限公司	IDT7164L25YI	IDT	20+	SOP-28	1001	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市河鋒鑫科技有限公司	IDT7164L25YI	IDT	22+	28SOJ	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IDT7164L25YI	IDT	21+	28SOJ	13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IDT7164L25YI	IDT	23+	28SOJ	9000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IDT7164L25YI	IDT, Integrated Device Techno	23+	28-SOJ	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IDT7164L25YI	IDT, Integrated Device Techno	23+	28-SOJ	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)

更多IDT7164L25YI供應(yīng)商更新時(shí)間2025-1-5 10:45:00

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