首頁 >IDT70V3599S133BCGI>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號(hào):
IDT70V3599S133BCGI
- 制造商:
Integrated Device Technology Inc
- 功能描述:
IC SRAM 4.5MBIT 133MHZ 256CABGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
22+ |
256CABGA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
21+ |
256CABGA |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IDT |
23+ |
256CABGA |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
IDT |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
IDT |
23+ |
256-CABGA(17x17) |
71890 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢! |
詢價(jià) | ||
IDT |
23+ |
256BGA |
9526 |
詢價(jià) | |||
IDT |
2021+ |
BGA256 |
3100 |
只做原裝假一罰十 |
詢價(jià) | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
最新 |
2000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||||
IDT |
2023+ |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) |
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