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70V3599S133BC

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133BCG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BCG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BCGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BCGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133BCGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BCI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133BF

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133BFG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BFG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BFGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BFGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133BFGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133BFI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3599S133DRG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133DRG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133DRGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3599S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70V3599S133BC

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT70V3599S133BCGI

  • 制造商:

    Integrated Device Technology Inc

  • 功能描述:

    IC SRAM 4.5MBIT 133MHZ 256CABGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
22+
256CABGA
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
256CABGA
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
256CABGA
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
IDT
23+
256-CABGA(17x17)
71890
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
詢價(jià)
IDT
23+
256BGA
9526
詢價(jià)
IDT
2021+
BGA256
3100
只做原裝假一罰十
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
最新
2000
原裝正品現(xiàn)貨
詢價(jià)
IDT
2023+
3000
進(jìn)口原裝現(xiàn)貨
詢價(jià)
更多IDT70V3599S133BCGI供應(yīng)商 更新時(shí)間2024-11-7 17:05:00