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IDT70P3517S250RM集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

廠商型號(hào) |
IDT70P3517S250RM |
參數(shù)屬性 | IDT70P3517S250RM 封裝/外殼為576-BBGA,F(xiàn)CBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 576FCBGA |
功能描述 | 512K/256K x36 SYNCHRONOUS DUAL QDR-II |
封裝外殼 | 576-BBGA,F(xiàn)CBGA |
文件大小 |
873.39 Kbytes |
頁面數(shù)量 |
20 頁 |
生產(chǎn)廠商 | Integrated Device Technology, Inc. |
企業(yè)簡(jiǎn)稱 |
IDT |
中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-3-6 19:27:00 |
人工找貨 | IDT70P3517S250RM價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
IDT70P3517S250RM規(guī)格書詳情
Functional Description
As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround.
Features
◆ 18Mb Density (512K x 36)
– Also available 9Mb Density (256K x 36)
◆ QDR-II x 36 Burst-of-2 Interface
– Commercial: 233MHz, 250MHz
◆ Two independent ports
– True Dual-Port Access to common memory
◆ Separate, Independent Read and Write Data Buses on each Port
– Supports concurrent transactions
◆ Two-Word Burst on all DPRAM accesses
◆ DDR (Double Data Rate) Multiplexed Address Bus
– One Read and One Write request per clock cycle
◆ DDR (Double Data Rate) Data Buses
– Four word burst data (Two Read and Two Write) per clock on each port
– Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports)
◆ Octal Data Rate
◆ Port Enable pins (E0,E1) for depth expansion
◆ Dual Echo Clock Output with DLL-based phase alignment
◆ High Speed Transceiver Logic inputs
– scaled to receive signals from 1.4V to 1.9V
◆ Scalable output drivers
– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V
– Output impedance adjustable from 35 ohms to 70 ohms
◆ 1.8V Core Voltage (VDD)
◆ 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)
◆ JTAG Interface - IEEE 1149.1 Compliant
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IDT70P3517S250RM
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 雙端口,同步 QDR II
- 存儲(chǔ)容量:
9Mb(256K x 36)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
576-BBGA,F(xiàn)CBGA
- 供應(yīng)商器件封裝:
576-FCBGA(25x25)
- 描述:
IC SRAM 9MBIT PARALLEL 576FCBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
21+ |
576FCBGA |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IDT |
22+ |
576FCBGA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
23+ |
BGAQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì). |
詢價(jià) | ||
IDT |
23+ |
576FCBGA |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
IDT |
NA |
5650 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨 |
詢價(jià) | |||
IDT |
22+ |
BGA |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IDT |
23+ |
576-FCBGA(25x25) |
9000 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IDT |
24+ |
576-FCBGA |
3930 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IDT |
16+ |
QFP |
2500 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
Renesas Electronics America In |
24+ |
576-BBGA FCBGA |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) |