首頁 >IC-614-HTT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PassiveInputDigitalIsolators | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪訊美國JDSU | JDSU | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪訊美國JDSU | JDSU | ||
2.0A,250V,2.0Ohm,N-ChannelPowerMOSFET Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch | Intersil Intersil Corporation | Intersil | ||
EaseofParalleling DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMosfetTransistor ?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±30V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
hexfetpowermosfet HEXFETPowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?SurfaceMount ?EaseofParalleling ?SimpleDriveRequirements ?Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET HEXFETPowerMOSFET ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.1A) Through-HolePackags TO-220FullPak(FullyIsolated) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET
| IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
IC-614-HTT
- 制造商:
Samtec Inc
- 功能描述:
CONN DIP SCKT SKT 14 POS 2.54MM SLDR ST TH - Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMTEC |
新 |
510 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ICSI |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ICSI |
2022 |
SOJ |
7070 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ICSI |
23+24 |
SOJ- |
9680 |
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢 |
詢價(jià) | ||
ICSI |
23+ |
SOJ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
ICSI |
23+ |
SC70-5 |
36000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ICSI |
23+ |
66994 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | |||
ICSI |
2023+ |
SOJ-32 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
ICSI |
24+ |
SOJ |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
ICSI |
23+ |
SOJ |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) |
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