首頁(yè)>HY27LF081G2M-VPEB>規(guī)格書(shū)詳情
HY27LF081G2M-VPEB中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
相關(guān)芯片規(guī)格書(shū)
更多- HY27LF081G2M-TPEB
- HY27LF081G2M-VIB
- HY27LF081G2M-VMS
- HY27LF081G2M-VEB
- HY27LF081G2M-TPIB
- HY27LF081G2M-VCS
- HY27LF081G2M-VEP
- HY27LF081G2M-TPCS
- HY27LF081G2M-VPCS
- HY27LF081G2M-TPIS
- HY27LF081G2M-VPCP
- HY27LF081G2M-VIS
- HY27LF081G2M-TPEP
- HY27LF081G2M-TPMP
- HY27LF081G2M-VIP
- HY27LF081G2M-TPIP
- HY27LF081G2M-VCB
- HY27LF081G2M-VMB
HY27LF081G2M-VPEB規(guī)格書(shū)詳情
SUMMARY DESCRIPTION
The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
產(chǎn)品屬性
- 型號(hào):
HY27LF081G2M-VPEB
- 制造商:
HYNIX
- 制造商全稱(chēng):
Hynix Semiconductor
- 功能描述:
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | |||
HYNIX |
2020+ |
BGA63 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
HYNIX |
0710PB |
BGA |
15 |
原裝現(xiàn)貨 |
詢價(jià) | ||
HYNIX/海力士 |
24+ |
TSOP |
6880 |
只做原裝,公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
24+ |
N/A |
53000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
BGA63 |
23+ |
16 |
3500 |
詢價(jià) | |||
HYNIX/海力士 |
21+ |
TSOP |
19600 |
一站式BOM配單 |
詢價(jià) | ||
HYNIX |
23+ |
原裝正品現(xiàn)貨 |
10000 |
BGA63 |
詢價(jià) | ||
HYNIX |
21+ |
BGA |
9866 |
詢價(jià) | |||
BGA63 |
22+ |
LATTICE/萊迪斯 |
30000 |
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng),一手貨源,原裝正品可零售! |
詢價(jià) |