首頁 >HX6408-EFN>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HX6408-EFN | 512k x 8 STATIC RAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | |
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell |
詳細(xì)參數(shù)
- 型號:
HX6408-EFN
- 制造商:
HONEYWELL
- 制造商全稱:
Honeywell Solid State Electronics Center
- 功能描述:
512k x 8 STATIC RAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HONYWELL |
15+ |
原廠封裝 |
5 |
宇航IC只做原裝假一罰十 |
詢價(jià) | ||
HONYWELL |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理 |
詢價(jià) | ||
HONYWELL |
24+ |
5 |
全新原裝 |
詢價(jià) | |||
HONYWELL |
18+ |
原廠原裝假一賠十 |
18 |
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠 |
詢價(jià) | ||
HONYWELL |
2022+ |
5 |
只做原裝,價(jià)格優(yōu)惠,長期供貨。 |
詢價(jià) | |||
HONYWELL |
23+ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | |||
HUAXIN(華芯) |
23+ |
SOT23 |
50000 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
HUAXIN(華芯) |
23+ |
SOT23 |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價(jià) | ||
HUAXIN(華芯) |
2021+ |
TO-92S |
1414 |
詢價(jià) | |||
HUAXIN(華芯) |
23+ |
TO-92S |
5185 |
專做感器/百分百原裝現(xiàn)貨 |
詢價(jià) |
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