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HX6228TBRC中文資料霍尼韋爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HX6228TBRC
廠商型號(hào)

HX6228TBRC

功能描述

128K x 8 STATIC RAM-SOI HX6228

文件大小

153.48 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Honeywell Solid State Electronics Center
企業(yè)簡(jiǎn)稱

Honeywell霍尼韋爾

中文名稱

霍尼韋爾國(guó)際官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-26 11:24:00

HX6228TBRC規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environ ments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10 power supply. The RAM is wire bond programmable for either TTL or CMOS compatible I/O. Power consumption is typically less than 25 mW/MHz in operation, and less than 5 mW in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 15 ns at 5V.

FEATURES

RADIATION

? Fabricated with RICMOS? IV Silicon on Insulator (SOI)

0.7 μm Process (Leff = 0.55 μm)

? Total Dose Hardness through 1x106 rad(SiO2)

? Neutron Hardness through 1x1014 cm-2

? Dynamic and Static Transient Upset Hardness

through 1x1011 rad (Si)/s

? Dose Rate Survivability through <1x1012 rad(Si)/s

? Soft Error Rate of <1x10-10 upsets/bit-day in

Geosynchronous Orbit

? No Latchup

OTHER

? Read/Write Cycle Times

≤ 16 ns (Typical)

≤ 25 ns (-55 to 125°C)

? Typical Operating Power <25 mW/MHz

? Asynchronous Operation

? CMOS or TTL Compatible I/O

? Single 5 V ± 10 Power Supply

? Packaging Options

- 32-Lead Flat Pack (0.820 in. x 0.600 in.)

- 40-Lead Flat Pack (0.775 in. x 0.710 in.)

產(chǎn)品屬性

  • 型號(hào):

    HX6228TBRC

  • 制造商:

    HONEYWELL

  • 制造商全稱:

    Honeywell Solid State Electronics Center

  • 功能描述:

    128K x 8 STATIC RAM-SOI HX6228

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