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IRF510

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRF510

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.289?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF510N

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRF510N

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510N

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.289?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF510N

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510N

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF

International Rectifier

IRF510N

RepetitiveAvalancheRated

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF510N

HEXFETPowerMOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    HV510

  • 制造商:

    SUPERTEX

  • 制造商全稱(chēng):

    SUPERTEX

  • 功能描述:

    240V, 12-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs

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CONNOR
1948+
DIP4
6852
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CONNOR
23+
DIP4
10000
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CONNOR
00+
DIP4
53
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CONNOR
23+
DIP4
53
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CONNOR
23+
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10000
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CONNOR
20+
DIP4
53
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MICROCHIP/微芯
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18000
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23+
VCXO
6500
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Microchip
22+
44PQFP
9000
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Microchip
21+
44PQFP
13880
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更多HV510供應(yīng)商 更新時(shí)間2025-3-25 17:47:00