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HUFA75329D3

20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUFA75329D3S

20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF75329D3

20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF75329D3

20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF75329D3S

N-ChannelUltraFETPowerMOSFET55V,20A,26m廓

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HUF75329D3S

20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF75329D3S

20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF75329D3S

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HUF75329D3S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=26mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive ·HalfBridge ·PFCandOtherBoostConverter ·BuckConverterh

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HUF75329D3ST

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號：

    HUFA75329D3

  • 功能描述：

    MOSFET 55V N-Ch PowerMOSFET UltraFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi(安森美)
24+
IPAK
7845
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
FAIRCHILD
23+
TO-251
9526
詢價(jià)
FAIRCHILD
24+
TO-251
8866
詢價(jià)
仙童
06+
TO-251
5000
原裝庫存
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FSC/ON
23+
原包裝原封 □□
3600
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫存
 詢價(jià)
FAIRCHILD
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
Fairchild/ON
22+
TO2513 Short Leads IPak TO251A
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Fairchild/ON
21+
TO2513 Short Leads IPak TO251A
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
FAIRCHILD/仙童
23+
TO-251
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多HUFA75329D3供應(yīng)商 更新時(shí)間2025-4-29 13:44:00

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