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IRFN440

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=8.0A)

RDS(on)0.85? ID8.0A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRF

International Rectifier

IRFN440

SimpleDriveRequirements

IRF

International Rectifier

IRFP440

8.8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP440

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.8A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP440

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP440

Dynamicdv/dtRating

TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole.Italsoprovidesgreatercreepageoisiancebetweenpinstcme

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP440

PowerMOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP440A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP440PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

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NXP
22+
NA
45000
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NXP
20+
射頻元件
3000
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PHILIPS
23+
65480
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VISHAY(威世)
24+
SOP8
7350
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LEM
2024+
SENSOR
270
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AD
23+
原廠原包
19960
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AD
2138+
DIP
8960
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AD
24+
DIP
9630
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05+
原廠原裝
4302
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AD
23+
DIP
8890
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更多HTRM440SLASHCIE供應(yīng)商 更新時間2025-5-1 10:08:00