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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
ICS9220	文件：216.34 Kbytes Page：17 Pages	ProgrammableRambusTMXDRTMClockGenerator	IDT Integrated Device Technology, Inc.	IDT
ICS9220B	文件：192.16 Kbytes Page：16 Pages	ProgrammableRambusTMXDRTMClockGenerator	IDT Integrated Device Technology, Inc.	IDT
IIRFR9220TRLPBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IIRFR9220TRLPBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IIRFR9220TRLPBFA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFD9220	文件：53.46 Kbytes Page：6 Pages	0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD9220	文件：172.31 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A) HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling	IRF International Rectifier	IRF
IRFD9220	文件：1.56402 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD9220PBF	文件：1.75421 Mbytes Page：8 Pages	HEXFETPowerMOSFET HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free	IRF International Rectifier	IRF
IRFD9220PBF	文件：1.56402 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE9220	文件：137.4 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe	IRF International Rectifier	IRF
IRFE9220	文件：138.44 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF9220	文件：16.67 Kbytes Page：1 Pages	P-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF9220	文件：327.78 Kbytes Page：7 Pages	-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl	Intersil Intersil Corporation	Intersil
IRFF9220	文件：130.24 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala	IRF International Rectifier	IRF
IRFF9220	文件：130.24 Kbytes Page：7 Pages	HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala	IRF International Rectifier	IRF
IRFR9220	文件：169 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?	IRF International Rectifier	IRF
IRFR9220	文件：99.42 Kbytes Page：8 Pages	3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9220	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市富芯樂電子科技有限公司	HT9220H	HT	22+	DIP	151	全新原裝現(xiàn)貨	詢價(jià)
深圳市佳鑫美電子科技有限公司	HT9220L	HOLTEK	24+	DIP	2560	絕對(duì)原裝!現(xiàn)貨熱賣!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	HT9220L	HOLTEK/合泰	23+	DIP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	HT9220L	合泰	21+	DIP	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳廊盛科技有限公司	HT9220L	HOLTEK/合泰	2022	DIP	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市匯萊威科技有限公司	HT9220L		HOLTEK	DIP	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	HT9220L	HOLTEK/合泰	23+	DIP	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市得捷芯城科技有限公司	HT9220L	HOLTEK/合泰	23+	NA/	2160	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價(jià)
深圳市柯爾基電子有限公司	HT9220L	HOLTEK	23+24	DIP	29850	原裝正品優(yōu)勢(shì)渠道價(jià)格合理.可開13%增值稅發(fā)票	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	HT92232	HOLTEK	24+	SMD/DIP	17900	一級(jí)授權(quán)代理原裝現(xiàn)貨熱賣	詢價(jià)

更多HT9220H供應(yīng)商更新時(shí)間2025-1-17 16:57:00

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