零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A) HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPowerMOSFET HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ? | IRF International Rectifier | IRF | ||
3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HT |
23+ |
DIP28 |
1084 |
全新原裝現貨 |
詢價 | ||
HOLT |
16+ |
原廠封裝 |
2000 |
原裝現貨假一罰十 |
詢價 | ||
HOLTEK |
24+ |
DIP-28 |
50 |
詢價 | |||
TEK |
05+ |
原廠原裝 |
94 |
只做全新原裝真實現貨供應 |
詢價 | ||
HOLTEK/合泰 |
23+ |
DIP |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
Holtek/合泰 |
21+ |
DIP |
10000 |
原裝現貨假一罰十 |
詢價 | ||
HOLTEK/合泰 |
2022 |
DIP |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 | ||
HT |
22+ |
DIP |
103 |
全新原裝現貨 |
詢價 | ||
MAX/DALL |
2023+環(huán)保現貨 |
標準封裝 |
2500 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
HOLTEK/合泰 |
23+ |
NA/ |
3740 |
原裝現貨,當天可交貨,原型號開票 |
詢價 |
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