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ICS9220

ProgrammableRambusTMXDRTMClockGenerator

IDT

Integrated Device Technology, Inc.

ICS9220B

ProgrammableRambusTMXDRTMClockGenerator

IDT

Integrated Device Technology, Inc.

IIRFR9220TRLPBF

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IIRFR9220TRLPBF

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

IIRFR9220TRLPBFA

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

IRFD9220

0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9220

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A)

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling

IRF

International Rectifier

IRFD9220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9220PBF

HEXFETPowerMOSFET

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free

IRF

International Rectifier

IRFD9220PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe

IRF

International Rectifier

IRFE9220

SimpleDriveRequirements

IRF

International Rectifier

IRFF9220

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9220

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl

Intersil

Intersil Corporation

IRFF9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala

IRF

International Rectifier

IRFF9220

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala

IRF

International Rectifier

IRFR9220

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A)

DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?

IRF

International Rectifier

IRFR9220

3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HT
24+
DIP
13
詢價(jià)
HOLTEK/合泰
22+
24
原裝正品現(xiàn)貨,德為本,正為先,通天下!
詢價(jià)
HOLTEK
24+
DIP
2560
絕對原裝!現(xiàn)貨熱賣!
詢價(jià)
HOLT
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
詢價(jià)
HOLTEK
2016+
DIP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
HOLTEK
23+
DIP-28
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
TEK
05+
原廠原裝
677
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
HOLTEK
1995+
DIP-28
2337
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
HOLTEK
23+
65480
詢價(jià)
HOLTEK/合泰
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多HT9220供應(yīng)商 更新時(shí)間2025-1-18 16:30:00