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HRP180N10K

100V N-Channel Trench MOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFE180N10

HiPerFET-TMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?ConformstoSOT-227Boutline ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?

IXYS

IXYS Corporation

IXFK180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

IXFN180N10

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·SynchronousRectification ·LowVoltagerelays ·BatteryChargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN180N10

PowerMOSFET

IXYS

IXYS Corporation

IXFN180N10

HiPerFETPowerMOSFETSingleMOSFETDie

HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackage ?miniBLOC,withAluminiumNitrideIsolation ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowRDS(on) ?LowDrain-to-TabCapacitan

IXYS

IXYS Corporation

IXFR180N10

HiPerFETPowerMOSFETsISOPLUS247

VDSS=100V ID25=165A RDS(on)=8m? trr≤250ns SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX180N10

HiperFETPowerMOSFETs

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
MINI
24+
SMD
3600
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Mean
1931+
N/A
51
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MW
23+
10000
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MEANWELL
1000
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24+
N/A
60000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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POWER SUPPLY
10
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MIC
23+
DO-41
10000
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HITACHI
22+23+
New
33459
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HITACHI
23+
65480
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日立
23+
波封
65845
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更多HRP180N10K供應(yīng)商 更新時間2025-3-24 11:05:00

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