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HRH25N50ANFT

500V N-Channel Planar MOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANV

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANW

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH25N50ANX

500VN-ChannelPlanarMOSFET

Features RDSON=0.18Ω@Vgs=10V,Id=12.5A UltraLowgateCharge(typical80nC) LowCrss(typical22pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Adapter/Charger

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

ISC25N50F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTV25N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTV25N50E

TMOSPOWERFET25AMPERES500VOLTSRDS(on)=0.200OHM

TMOSE?FETPowerFieldEffectTransistorD3PAKforSurfaceMount N?ChannelEnhancement?ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SIHA25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHA25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHB25N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATONS ?Hards

VishayVishay Siliconix

威世科技威世科技半導體

SIHG25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHG25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHP25N50E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHP25N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATONS ?Hard

VishayVishay Siliconix

威世科技威世科技半導體

SIHP25N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
HRMICRO/華瑞微
24+
TO-3P
5000
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更多HRH25N50ANFT供應商 更新時間2024-12-28 19:16:00