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HRH20N50ANB

500V N-Channel Planar MOSFET

Features RDSON=0.17Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73.4nC) LowCrss(typical4.8pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N50ANF

500VN-ChannelPlanarMOSFET

Features RDSON=0.17Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73.4nC) LowCrss(typical4.8pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N50ANV

500VN-ChannelPlanarMOSFET

Features RDSON=0.17Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73.4nC) LowCrss(typical4.8pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N50ANW

500VN-ChannelPlanarMOSFET

Features RDSON=0.17Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73.4nC) LowCrss(typical4.8pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH20N50ANX

500VN-ChannelPlanarMOSFET

Features RDSON=0.17Ω@Vgs=10V,Id=10A UltraLowgateCharge(typical73.4nC) LowCrss(typical4.8pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

I20N50

20A500VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

SMPSMOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharac

IRF

International Rectifier

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?LowRDS(on) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50KPBF

HEXFETPowerMOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyC

IRF

International Rectifier

IRFB20N50KPBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50KPBF

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?LowRDS(on) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFP20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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ALCATEL
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十年專營原裝現(xiàn)貨,假一賠十
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更多HRH20N50ANB供應(yīng)商 更新時間2024-10-25 15:00:00