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IRFR224B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR224PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR224PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224PBF

Dynamicdv/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224TRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224TRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    HO224

  • 制造商：

    Thomas & Betts

  • 功能描述：

    1 1/4 NIPPLE, OFFSET 3/4,RGD/IMC,

供應(yīng)商型號品牌批號封裝庫存備注價格
HOSONIC
1735+
DIP
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
HOSONIC/臺灣鴻星
23+
1
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
HOSONIC/臺灣鴻星
23+
6500
1
專注配單,只做原裝進口現(xiàn)貨
 詢價
HOSONIC
24+
DIP-4
200
進口原裝正品優(yōu)勢供應(yīng)
 詢價
HOSONIC
24+
DIP-4
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
HOSONIC/臺灣鴻星
23+
DIP-4
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
HOSON/臺灣鴻星
23+
NA/
500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
HOSONIC/臺灣鴻星
QQ咨詢
DIP-4
562
全新原裝 研究所指定供貨商
 詢價
HOSONIC
2318+
DIP-4
4862
只做進口原裝!假一賠百!自己庫存價優(yōu)!
 詢價
hosonic
9601
48
公司優(yōu)勢庫存 熱賣中!
 詢價
更多HO224供應(yīng)商 更新時間2025-4-3 16:44:00

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