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HMC323

HBT DRIVER AMPLIFIER DC - 3.0 GHz

GeneralDescription TheHMC323isaGaAsInGaPHeterojunctionBipolarTransistor(HBT)MMICamplifierthatoperatesfromasingleVccsupply.ThesurfacemountSOT26amplifiercanbeusedasabroadbandgainstageorusedwithexternalmatchingforoptimizednarrowbandapplications.TheHMC323o

Hittite

Hittite Microwave Corporation

HMC323

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

Hittite

Hittite Microwave Corporation

HMC323_01

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

Hittite

Hittite Microwave Corporation

I323

LeadedOscillator,TCXO,TCVCXOMetalPackage,FullSizeDIP

ProductFeatures: AvailableinBothClippedSinewaveand HCMOSOutputLevels CompatiblewithLeadfreeProcessing Applications: BaseStation IP WiMax/Wlan GeneralPurpose

ILSI

ILSI America LLC

IMX323LQ-C

Diagonal6.23mm(Type1/2.9)CMOSImageSensorwithSquarePixelforColorCameras

SonySony Corporation

索尼

IMX323LQN

Diagonal6.23mm(Type1/2.9)Approx.2.19M-EffectivePixelColorCMOSImageSensor

SonySony Corporation

索尼

IP323A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IR323

5mmInfraredLED,T-13/4

Descriptions ?EVERLIGHT’SInfraredEmittingDiode(IR323)isa highintensitydiode,moldedinabluetransparentplasticpackage. ?Thedeviceisspectrallymatchedwithphototransistor,photodiode andinfraredreceivermodule. Features ?Highreliability ?Highradiantinte

EverlightEverlight Electronics Co., Ltd

臺灣億光億光電子工業(yè)股份有限公司

IRF323

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF323

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF323

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF323

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF323

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF323

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

KEHZN-323

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KEHZN-323/Q

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KEWTN-323

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KEWTN-323/Q

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KEWTN-323W

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KEWTN-323W/Q

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

詳細參數(shù)

  • 型號：

    HMC323

  • 制造商：

    Hittite Microwave Corp

  • 功能描述：

    0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

供應(yīng)商型號品牌批號封裝庫存備注價格
HITTITE
24+
SOT26
82
詢價
HITTITE
638
原裝正品
 詢價
Hittite
23+
SOT
9280
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
24+
SMD
5500
一級代理原裝現(xiàn)貨假一罰十
 詢價
HITTITE
SOT26
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
HITTITE
23+
SOT26
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
原廠
NA
5500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
HITTITE
24+
6350
全新原裝真實庫存含13點增值稅票!
 詢價
Hittite
23+
200
34913
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
HITTITE
24+
2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
 詢價
更多HMC323供應(yīng)商 更新時間2025-1-7 16:30:00

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