HMC-ALH382RF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

HMC-ALH382屬于RF/IF射頻/中頻RFID的射頻放大器。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的HMC-ALH382射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

General Description

The hmC-Alh382 is a high dynamic range, four stage GaAs hemT mmiC low noise Amplifier (lnA) which operates between 57 and 65 Ghz. The hmC-Alh382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile lnA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes.

Features

noise figure: 3.8 dB

p1dB: +12 dBm

Gain: 21 dB

supply Voltage: +2.5V

50 ohm matched input/output

Die size: 1.55 x 0.73 x 0.1 mm

Typical Applications

This hmC-Alh382 is ideal for:

? Short Haul / High Capacity Links

? Wireless LANs

? Military & Space