首頁 >HM630>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF630

FIELDEFFECTPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF630

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF630

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF630A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630B

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

詳細參數

  • 型號：

    HM630

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    IC

供應商型號品牌批號封裝庫存備注價格
HMSEMI
2022+
TO-220
32500
原廠代理 終端免費提供樣品
 詢價
Hmsemi
23+
TO-220
6000
原裝正品，支持實單
 詢價
HMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現貨
 詢價
HMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現貨
 詢價
HIT
23+
SOP28
3500
絕對全新原裝!現貨!特價!請放心訂購!
 詢價
HIT
25+
SOP28L
680
原裝現貨熱賣中,提供一站式真芯服務
 詢價
HIT
24+
SOP
3200
絕對原裝自家現貨!真實庫存!歡迎來電!
 詢價
HIT
05+
原廠原裝
4340
只做全新原裝真實現貨供應
 詢價
HITACHI
23+
SOP28
7750
全新原裝優(yōu)勢
 詢價
三凌
2020+
PLCC
300
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
更多HM630供應商 更新時間2025-4-22 14:01:00

相關規(guī)格書

更多

相關庫存

更多