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HM628100I

Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HM628100I_15

Wide Temperature Range Version 8 M SRAM (1024-kword ? 8-bit)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HY628100A

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100AG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100ALG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100ALLG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100B

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100B-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100B-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLG-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLLG-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    HM628100I

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    Wide Temperature Range Version 8 M SRAM(1024-kword x 8-bit)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HITACHI
18+
TSOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
HITACHI
23+
TSOP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
RenesasEl
2022+
6
全新原裝 貨期兩周
詢價(jià)
HIT
2023+環(huán)保現(xiàn)貨
TSSOP
10167
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
詢價(jià)
23+
SOP44
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
HI
2023+
TSOP
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
HI
24+
TSOP
35200
一級(jí)代理/放心采購
詢價(jià)
HI
23+
TSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
HI
23+
TSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
HITACHI
2020+
TSOP
27
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
更多HM628100I供應(yīng)商 更新時(shí)間2025-1-18 15:14:00