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HM6216255H

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HC

4M High Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HCSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshi

HitachiHitachi Semiconductor

日立日立公司

HM6216255HCJP-10

4M High Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HCSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshi

HitachiHitachi Semiconductor

日立日立公司

HM6216255HCLJP-10

4M High Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HCSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshi

HitachiHitachi Semiconductor

日立日立公司

HM6216255HCLTT-10

4M High Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HCSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshi

HitachiHitachi Semiconductor

日立日立公司

HM6216255HCTT-10

4M High Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HCSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshi

HitachiHitachi Semiconductor

日立日立公司

HM6216255HI

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HISeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplication

HitachiHitachi Semiconductor

日立日立公司

HM6216255HJP-10

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HJP-12

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HJP-15

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HJPI-12

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HISeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplication

HitachiHitachi Semiconductor

日立日立公司

HM6216255HJPI-15

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HISeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplication

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLJP-10

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLJP-12

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLJP-15

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLTT-10

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLTT-12

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HLTT-15

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HTT-10

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

HM6216255HTT-12

4M high Speed SRAM (256-kword x 16-bit)

Description TheHM6216255HSeriesisa4-MbithighspeedstaticRAMorganized256-kword×16-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicatio

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號:

    HM6216255H

  • 制造商:

    HITACHI

  • 制造商全稱:

    Hitachi Semiconductor

  • 功能描述:

    4M High Speed SRAM(256-kword x 16-bit)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HIT
2020+
SOJ44
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
HIT
TSOP44
217
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價(jià)
HITACH
23+
SOJ
5000
原裝正品,假一罰十
詢價(jià)
HITACHISEMIC
05+
原廠原裝
4285
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
RENESAS
24+
TSOP
1068
原裝現(xiàn)貨假一罰十
詢價(jià)
HITACHI
24+
SOJ-44
4650
詢價(jià)
HITACHI
2020+
SOJ
3
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
24+
TSSOP
8
詢價(jià)
MIT
23+
SOJ
1050
特價(jià)庫存
詢價(jià)
HIT
17+
TSOP44
9988
只做原裝進(jìn)口,自己庫存
詢價(jià)
更多HM6216255H供應(yīng)商 更新時(shí)間2025-1-18 9:00:00