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MTB50N06EL

TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS

TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50N06VL

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06VL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

技術(shù)參數(shù)

  • 封裝（Package）：

    TO-252

  • 溝道（Polarity）：

    N溝道

  • VDS(Max)BVDSS(V)：

    60.00V

  • ID(Max)ID(A)：

    50.00A

  • IDM：

    200.00A

  • VTH(Typ)：

    1.90V

  • VGS：

    20.00V

  • RDS(ON)@-10VTyp(mΩ)：

    14.00mΩ

  • RDS(ON)@-4.5VTyp(mΩ)：

    0.00mΩ

  • RDS(ON)@-2.5VTyp(mΩ)：

    0.00mΩ

  • 直接替代型號（compatible）：

    STP50N06/IRFZ44N/SUD50N06/SSF6808/AP50N06/PHD50N06/FQP50N06/FTD50N06

供應(yīng)商型號品牌批號封裝庫存備注價格
HMSEMI
25+
TO-252
35412
HMSEMI全新特價HM50N06K即刻詢購立享優(yōu)惠#長期有貨
 詢價
HMSEMI
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
HM
2022+
TO-252
23865
原廠代理 終端免費提供樣品
 詢價
H
23+
TO-252
6000
原裝正品，支持實單
 詢價
VBsemi
21+
TO252
10065
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
HMSEMI
24+
NA/
2750
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
HMSEMI
23+
TO-252
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
HMSEMI
23+
TO-252
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
VBsemi
24+
TO252
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
H
25+
TO-252
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多HM50N06K供應(yīng)商 更新時間2025-7-27 14:14:00

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