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HM2106

Chip Data Manual V1.0

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM2106NL

包裝：管件 類別：變壓器 脈沖變壓器 描述：XFMR MODULE AECQ BATT MNGT

PulseElectronicsNetworkPulse Electronics Networking BU

PulseElectronicsNetworkPulse Electronics Networking BU

HM2106NLT

包裝：管件 類別：變壓器 脈沖變壓器 描述：MDL, SIN, XFMR, 1:1, 4.3KV, SMT,

PulseElectronicsNetworkPulse Electronics Networking BU

PulseElectronicsNetworkPulse Electronics Networking BU

HM2106NLT

包裝：卷帶（TR）剪切帶（CT） 類別：變壓器 脈沖變壓器 描述：MDL, SIN, XFMR, 1:1, 4.3KV, SMT,

PulseElectronicsNetworkPulse Electronics Networking BU

PulseElectronicsNetworkPulse Electronics Networking BU

HO-NP-2106

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團

HO-P-2106

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團

IR2106

HIGHANDLOWSIDEDRIVER

Description TheIR2106/IR21064/IR2107/IR21074arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewith

IRF

International Rectifier

IR2106

HIGHANDLOWSIDEDRIVER

Description TheIR2106/IR21064/IR2107/IR21074arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewith

IRF

International Rectifier

IR2106

HIGHANDLOWSIDEDRIVER

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IR2106

HIGHANDLOWSIDEDRIVER

IRF

International Rectifier

IR2106PBF

HIGHANDLOWSIDEDRIVER

Description TheIR2106(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSo

IRF

International Rectifier

IR2106S

HIGHANDLOWSIDEDRIVER

Description TheIR2106/IR21064/IR2107/IR21074arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewith

IRF

International Rectifier

IR2106S

HIGHANDLOWSIDEDRIVER

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IR2106SPBF

HIGHANDLOWSIDEDRIVER

Description TheIR2106(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSo

IRF

International Rectifier

IR2106STRPBF

HIGHANDLOWSIDEDRIVER

Description TheIR2106(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor

IRF

International Rectifier

IRS2106

HIGHANDLOWSIDEDRIVER

Description TheIRS2106/IRS21064arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction. Features ?Floatingchanneldesignedforboo

IRF

International Rectifier

IRS2106

HIGHANDLOWSIDEDRIVER

IRF

International Rectifier

IRS2106

HIGHANDLOWSIDEDRIVER

Description TheIRS2106/IRS21064arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCM

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRS2106PBF

HIGHANDLOWSIDEDRIVER

Description TheIRS2106/IRS21064arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction. Features ?Floatingchanneldesignedforboo

IRF

International Rectifier

IRS2106S

HIGHANDLOWSIDEDRIVER

Description TheIRS2106/IRS21064arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCM

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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