HM-6551

256 x 4 CMOS RAM

Description TheHM-6551isa256x4staticCMOSRAMfabricatedusingself-alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoachievehighperformanceandlowpoweroperation. Features ?LowPowerStandby....................50μWMax ?Lo

HM-6551

256 x 4 CMOS RAM

HM-6551/883

256x4 CMOS RAM

The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with mi; ? This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.\n? Low Power Standby 50μW Max\n? Low Power Operation 20mW/MHz Max\n? Fast Access Time 220ns Max\n? Data Retention at 2.0V Min\n? TTL Compatible Input/Output\n? High Output Drive ;

HM-6551883

256 x 4 CMOS RAM

Description TheHM-6551isa256x4staticCMOSRAMfabricatedusingself-alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoachievehighperformanceandlowpoweroperation. Features ?LowPowerStandby....................50μWMax ?Lo

HM-6551B883

256 x 4 CMOS RAM

Description TheHM-6551isa256x4staticCMOSRAMfabricatedusingself-alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoachievehighperformanceandlowpoweroperation. Features ?LowPowerStandby....................50μWMax ?Lo

HM-6551/883

256 x 4 CMOS RAM

HM-6551_03

256 x 4 CMOS RAM

HM-6551SLASH883

256 x 4 CMOS RAM