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HIRF740

N-Channel Power MOSFET (400V, 10A)

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HIRF740F

N-Channel Power MOSFET (400V, 10A)

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HM740

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM740F

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

I740

10A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

INA740A

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740A

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740BIREMR

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IQXO-740

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF740

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF740

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis

DCCOM

Dc Components

詳細(xì)參數(shù)

  • 型號:

    HIRF740

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power MOSFET(400V, 10A)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
H
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
H
22+
TO-220
6000
十年配單,只做原裝
詢價(jià)
H
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
H
23+
TO-220
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
H
23+
TO-220
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
H
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
華昕
23+
TO220F
28888
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
華晰
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
RF Solutions
21+
Module
13880
公司只售原裝,支持實(shí)單
詢價(jià)
RF
20+
模塊
1128
無線通信IC,大量現(xiàn)貨!
詢價(jià)
更多HIRF740供應(yīng)商 更新時(shí)間2024-11-5 14:30:00