首頁>HIP6601BECBZ>規(guī)格書詳情
HIP6601BECBZ中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
HIP6601BECBZ |
參數(shù)屬性 | HIP6601BECBZ 封裝/外殼為8-SOIC(0.154",3.90mm 寬)裸露焊盤;包裝為管件;類別為集成電路(IC) > 柵極驅(qū)動器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC |
功能描述 | Synchronous Rectified Buck MOSFET Drivers |
文件大小 |
258.029 Kbytes |
頁面數(shù)量 |
12 頁 |
生產(chǎn)廠商 | Intersil Corporation |
企業(yè)簡稱 |
Intersil |
中文名稱 | Intersil Corporation官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-7 11:29:00 |
HIP6601BECBZ規(guī)格書詳情
The HIP6601B, HIP6603B and HIP6604B are high-frequency,
dual MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous rectified buck converter
topology. These drivers combined with a HIP63xx or the ISL65xx
series of Multi-Phase Buck PWM controllers and MOSFETs form
a complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to
12V, while the upper gate can be independently driven over a range
from 5V to 12V. The HIP6603B drives both upper and lower gates
over a range of 5V to 12V. This drive-voltage flexibility provides
the advantage of optimizing applications involving trade-offs
between switching losses and conduction losses. The HIP6604B
can be configured as either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and HIP6604B
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns transition
time. These products implement bootstrapping on the upper gate
with only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both MOSFETs
from conducting simultaneously.
Features
? Drives Two N-Channel MOSFETs
? Adaptive Shoot-Through Protection
? Internal Bootstrap Device
? Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
? Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
? Dual Gate-Drive Voltages for Optimal Efficiency
? Three-State Input for Output Stage Shutdown
? Supply Undervoltage Protection
? QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No
Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
? Pb-Free (RoHS Compliant)
Applications
? Core Voltage Supplies for Intel Pentium? III, AMD? Athlon?
Microprocessors
? High Frequency Low Profile DC/DC Converters
? High Current Low Voltage DC/DC Converters
產(chǎn)品屬性
- 產(chǎn)品編號:
HIP6601BECBZ
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 柵極驅(qū)動器
- 包裝:
管件
- 驅(qū)動配置:
半橋
- 通道類型:
同步
- 柵極類型:
N 溝道 MOSFET
- 電壓 - 供電:
10.8V ~ 13.2V
- 輸入類型:
非反相
- 上升/下降時間(典型值):
20ns,20ns
- 工作溫度:
0°C ~ 125°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
8-SOIC(0.154",3.90mm 寬)裸露焊盤
- 供應商器件封裝:
8-SOIC-EP
- 描述:
IC GATE DRVR HALF-BRIDGE 8SOIC
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INTERSIL |
22+ |
原裝 |
2300 |
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電! |
詢價 | ||
INTERSIL |
SO8 |
5000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | |||
INTERSIL |
22+23+ |
SOP-8 |
8000 |
新到現(xiàn)貨,只做原裝進口 |
詢價 | ||
Intersil |
22+ |
8-SOIC(0.154 |
3216 |
詢價 | |||
INTERSI |
2020+ |
SOP-8 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INTERSIL |
23+ |
SOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INTERSIL |
23+ |
SOP-8 |
3600 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
INTERSIL |
22+ |
SOP8 |
50000 |
大量原裝現(xiàn)貨,特價甩賣! |
詢價 | ||
Intersil |
23+ |
8-SOIC-EP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
Intersil |
2318+ |
SOIC-8 |
6890 |
長期供貨進口原裝熱賣現(xiàn)貨 |
詢價 |