首頁(yè)>HGTP5N120BND>規(guī)格書(shū)詳情
HGTP5N120BND中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
HGTP5N120BND |
| 功能描述 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 文件大小 |
216.81 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | Fairchild Semiconductor |
| 企業(yè)簡(jiǎn)稱 |
Fairchild【仙童半導(dǎo)體】 |
| 中文名稱 | 飛兆/仙童半導(dǎo)體公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2024-11-15 20:00:00 |
HGTP5N120BND規(guī)格書(shū)詳情
The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.
Features
? 21A, 1200V, TC = 25°C
? 1200V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
? Thermal Impedance SPICE Model
Temperature Compensating SABER? Model
www.fairchildsemi.com
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
HGTP5N120BND
- 功能描述：
IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
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