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HGTP20N60A4

600V, SMPS Series N-Channel IGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP20N60A4

600V, SMPS Series N-Channel IGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

Intersil

Intersil Corporation

HGTP20N60A4

Package:TO-220-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 70A TO220-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

20N60A4

600V,SMPSSeriesN-ChannelIGBTs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

20N60A4D

SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode600V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60A4DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

Intersil

Intersil Corporation

HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTs

TheHGTG20N60A4andHGTP20N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropva

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60A4

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartrans

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60A4D

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.7V(Max)@IC=20A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Ultrafasttailcurrentshutoff ·AutomotiveChargers ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    HGTP20N60A4

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.7V @ 15V,20A

  • 開關(guān)能量:

    105μJ(開),150μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    15ns/73ns

  • 測試條件:

    390V,20A,3 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220-3

  • 描述:

    IGBT 600V 70A TO220-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi(安森美)
23+
TO-220
1471
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價(jià)
FAIRCHILDONSEMICONDUCTOR
21+
NA
600
只做原裝,假一罰十
詢價(jià)
ON
20000
原裝現(xiàn)貨,可追溯原廠渠道
詢價(jià)
FAIRCHILD/仙童
23+
TO220
15000
全新原裝現(xiàn)貨,假一賠十.
詢價(jià)
FAIRCHILD
23+
TO-220
9526
詢價(jià)
FAIRCHIL
24+
TO-220
8866
詢價(jià)
原廠
23+
TO-220
6500
原裝正品,假一罰十
詢價(jià)
Fairchild
23+
TO-3P
7750
全新原裝優(yōu)勢
詢價(jià)
仙童
06+
TO-220
5000
原裝
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多HGTP20N60A4供應(yīng)商 更新時(shí)間2025-3-10 16:53:00