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HGTD10N40F1S中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HGTD10N40F1S
廠(chǎng)商型號(hào)

HGTD10N40F1S

功能描述

10A, 400V and 500V N-Channel IGBTs

文件大小

33.07 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠(chǎng)商 Intersil Corporation
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更新時(shí)間

2024-11-14 20:00:00

HGTD10N40F1S規(guī)格書(shū)詳情

Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

Features

? 10A, 400V and 500V

? VCE(ON) 2.5V Max.

? TFALL ≤1.4μs

? Low On-State Voltage

? Fast Switching Speeds

? High Input Impedance

Applications

? Power Supplies

? Motor Drives

? Protective Circuits

?

產(chǎn)品屬性

  • 型號(hào):

    HGTD10N40F1S

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

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