訂購數(shù)量 | 價格 |
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1+ |
首頁>HGT1S10N120BNS>詳情
HGT1S10N120BNS_PULSECORE/安森美_IGBT 晶體管 35A 1200V NPT N-Ch錦喆鴻電子
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HGT1S10N120BNS
- 功能描述:
IGBT 晶體管 35A 1200V NPT N-Ch
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商
- 企業(yè):
深圳市錦喆鴻電子有限公司
- 商鋪:
- 聯(lián)系人:
吳小姐
- 手機:
13342971909
- 詢價:
- 電話:
0755-82340907/13342971909
- 傳真:
0755-82340907
- 地址:
深圳市福田區(qū)華強北上步工業(yè)區(qū)101棟第五層510室
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