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HI5801

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801AIJ

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801BIJ

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801JCM

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HI5801KCM

ADVANCEINFORMATION

Description TheHI5801isamonolithic,12-bit,Analog-to-DigitalConverterfabricatedintheHBC10BiCMOSprocess.Itisacompletesubsystemcontainingvoltagereference,two-stepsubrangingA/D,errorcorrection,controllogic,andtiminggenerator.TheHI5801isdesignedforhighspeedapplic

Intersil

Intersil Corporation

HM5801

PMUforPortableApplications

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRF5801

PowerMOSFET(Vdss=200V,Rds(on)max=2.2ohm,Id=0.6A)

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801PBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free ●Halogen-Free Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801TRPBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent ●Lead-Free ●Halogen-Free Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF5801TRPBF-TP

N-ChannelMOSFET200V,1.5A,0.7

Features *Vbs=200V e=1.5A ?Roson£0.7Q@Ves=10V

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

詳細(xì)參數(shù)

  • 型號:

    HFCT-5801A

  • 功能描述:

    光纖發(fā)射器、接收器、收發(fā)器 2x9 155Mb 3.3V IR Tx cvr Blk ExtTmp

  • RoHS:

  • 制造商:

    Omron Electronics

  • 產(chǎn)品:

    Transmitters

  • 數(shù)據(jù)速率:

    3.5 Gbps

  • 波長:

    850 nm

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100
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6523
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更多HFCT-5801A供應(yīng)商 更新時間2025-4-12 10:27:00