首頁 >HFBR-1405TC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HFBR-1405TC | Components is Designed to Provide cost effective, High performance fiber optic communication links Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷倫科技安捷倫科技有限公司 | HP | |
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷倫科技安捷倫科技有限公司 | HP | ||
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features ?RoHScompliant ?Low-costtransmittersandreceivers ?ChoiceofST,SMA,SC,orFCports ?820nmwavelengthtechnology ?Signalratesupto160MBaud ?Linkdistancesuptoseveralkilometers ?Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半導(dǎo)體 | BOARDCOM | ||
ReflectiveSensor | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韋爾霍尼韋爾國際有限公司 | HONEYWELL-ACC | ||
InfraredSensorsLineGuide | HoneywellHoneywell Solid State Electronics Center 霍尼韋爾霍尼韋爾國際 | Honeywell | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3m? ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細(xì)參數(shù)
- 型號:
HFBR-1405TC
- 制造商:
AGILENT
- 制造商全稱:
AGILENT
- 功能描述:
Components is Designed to Provide cost effective, High performance fiber optic communication links
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HP |
05+ |
原廠原裝 |
4310 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
HP |
23+ |
65480 |
詢價 | ||||
AGILENT |
2005+ |
STOCK光纖 |
599 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
AVAGO |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
AGILENT |
21+ |
DIP |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn) |
詢價 | ||
Avago(安華高) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價 | ||
HFBR-1412 |
188 |
188 |
詢價 | ||||
AGILENT |
22+ |
DIP8 |
8000 |
原裝正品支持實(shí)單 |
詢價 | ||
AVAGO |
2023+ |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價 | |||
AGILENT |
2023+ |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價 |
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