首頁 >HEDS-9140%23E00>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HighTemperature140-CThreeChannelOpticalIncrementalEncoderModules | HPAgilent(Hewlett-Packard) 安捷倫科技安捷倫科技有限公司 | HP | ||
TwoChannelQuadratureOutputwithIndexPulse | AVAGOAVAGO TECHNOLOGIES LIMITED 安華高 | AVAGO | ||
ThreeChannelOpticalIncrementalEncoderModules | AVAGOAVAGO TECHNOLOGIES LIMITED 安華高 | AVAGO | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-CHANNELPOWERMOSFET FEATURES ?HERMETICALLYSEALEDTO–3METALPACKAGE ?SIMPLEDRIVEREQUIREMENTS ?SCREENINGOPTIONSAVAILABLE | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.2ohm,Id=-18A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreve | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
-19A,-100V,0.200Ohm,P-ChannelPowerMOSFET -19A,-100V,0.200Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow | Intersil Intersil Corporation | Intersil |
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