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HCTS244HMSR

Radiation Hardened Octal Buffer/Line Driver, Three-State

Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/

Intersil

Intersil Corporation

HCTS244HMSR

Radiation Hardened Octal Buffer/Line Driver, Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS244K

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/

Intersil

Intersil Corporation

HCTS244K

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS244KMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/

Intersil

Intersil Corporation

HCTS244KMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS244KTR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

HCTS244MS

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/

Intersil

Intersil Corporation

HCTS244MS

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si)/s ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS244T

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

Hittite

Hittite Microwave Corporation

HMC-ALH244

ACTIVEBIASCONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

IRF244

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF244

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP244

15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP244

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole

IRF

International Rectifier

IRFP244

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=15A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    HCTS244HMSR

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened Octal Buffer/Line Driver, Three-State

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全新原裝 研究所指定供貨商
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更多HCTS244HMSR供應(yīng)商 更新時(shí)間2024-10-23 14:16:00