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HAT2114RJ

Silicon N Channel Power MOS FET High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HDSP2114S

8-Character5x7DotMatrixParallelInputAlphanumericIntelligentDisplay

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

HDSP2114S

8-Character5x7DotMatrixParallelInputAlphanumericIntelligentDisplay

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

HO-NP-2114

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團(tuán)

HO-P-2114

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團(tuán)

HSDP2114S

AlphanumericIntelligentDisplayDevices

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

HUN2114

PNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IR2114SS

HALF-BRIDGEGATEDRIVERIC

IRF

International Rectifier

IR2114SSPBF

HALF-BRIDGEGATEDRIVERIC

Description TheIR211(4,41)/IR221(4,41)gatedriverfamilyissuitedtodriveasinglehalfbridgeinpowerswitchingapplications.Thesedriversprovidehighgatedrivingcapability(2Asource,3Asink)andrequirelowquiescentcurrent,whichallowstheuseofbootstrappowersupplytechnique

IRF

International Rectifier

IR2114SSPBF

HALF-BRIDGEGATEDRIVERIC

IRF

International Rectifier

IR2114SSPBF

HALF-BRIDGEGATEDRIVERIC

Description TheIR2114/IR2214gatedriverfamilyissuitedtodriveasinglehalfbridgeinpowerswitchingapplications.Thesedriversprovidehighgatedrivingcapability(2Asource,3Asink)andrequirelowquiescentcurrent,whichallowstheuseofbootstrappowersupplytechniquesinmediu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISG2114

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.15V@IC=50A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialUPS ·Stringinverter ·Welding

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JRC2114D

HIGHPERFORMANCELOW-NOISEDUALOPERATIONALAMPLIFIER

NJRCNew Japan Radio

新日本無線株式會(huì)社

KMUN2114

PNPSiliconBiasResistorTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KSR2114

PNP(SWITCHINGAPPLICATION)

NPNEPITAXIALSILICONTRANSISTOR

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KSV2114

GLASS-LEADEDGENERALPURPOSEABRUPTVARACTORDIODES

P/NCAPACITANCE KSV21016.8 KSV21028.2 KSV210310.0 KSV210412.0 KSV210515.0 KSV210618.0 KSV210722.0 KSV210827.0 KSV210933.0 KSV211039.0 KSV211147.0 KSV211256.0 KSV211368.0 KSV211482.0 KSV2115100.0

KNOX

Knox Semiconductor, Inc

KUWTN-2114

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KUWTN-2114/Q

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

LDC2114

InductiveTouchSolutionforLow-PowerHMIButtonApplications

TI1Texas Instruments

德州儀器

LDC2114

InductiveTouchSolutionforLow-PowerHMIandButtonApplications

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號(hào)：

    HAT2114RJ

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel Power MOS FET High Speed Power Switching

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Bychip
23+
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10000
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RENESAS
24+
SMD
12500
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RENESAS
08+
SOP8
6000
絕對(duì)原裝自己現(xiàn)貨
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RENESAS/瑞薩
23+
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69000
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普通
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23+
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50000
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23+
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6000
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RENESAS/瑞薩
23+
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6000
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RENESAS
23+
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5000
原裝正品,假一罰十
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RENESAS
2016+
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5500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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更多HAT2114RJ供應(yīng)商 更新時(shí)間2025-1-3 14:04:00

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