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HAF1001中文資料日立數(shù)據(jù)手冊(cè)PDF規(guī)格書

HAF1001
廠商型號(hào)

HAF1001

功能描述

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

文件大小

53.89 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Hitachi Semiconductor
企業(yè)簡(jiǎn)稱

Hitachi日立

中文名稱

日立公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-6 22:30:00

HAF1001規(guī)格書詳情

Features

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

? Logic level operation (–4 to –6 V Gate drive)

? High endurance capability against to the short circuit

? Built–in the over temperature shut–down circuit

? Latch type shut–down operation (Need 0 voltage recovery)

產(chǎn)品屬性

  • 型號(hào):

    HAF1001

  • 制造商:

    HITACHI

  • 制造商全稱:

    Hitachi Semiconductor

  • 功能描述:

    Silicon P Channel MOS FET Series Power Switching/Over Temperature Shut-down Capability

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
R
2020+
TO-220A
80000
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23+
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100
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R
23+
TO-220AB
8400
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VB
TO-220AB
68900
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VBsemi/臺(tái)灣微碧
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5026
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RENESAS(瑞薩)/IDT
23+
7350
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22+
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HITACHI/日立
23+
SOT263
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90
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