首頁>HA3-2839-9>規(guī)格書詳情
HA3-2839-9中文資料HARRIS數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
HA3-2839-9 |
| 功能描述 | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 文件大小 |
131.12 Kbytes |
| 頁面數(shù)量 |
8 頁 |
| 生產(chǎn)廠商 | Harris Corporation |
| 企業(yè)簡稱 |
HARRIS |
| 中文名稱 | Harris Corporation |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-4-10 16:10:00 |
| 人工找貨 | HA3-2839-9價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
HA3-2839-9規(guī)格書詳情
Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Features
? 63A, 600V at TC= +25°C
? Typical Fall Time - 230ns at TJ= +150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
產(chǎn)品屬性
- 型號(hào)：
HA3-2839-9
- 制造商：
Harris Corporation
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HARRIS |
22+ |
DIP-8 |
5000 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價(jià) | ||
INTERSIL |
25+23+ |
DIP-8 |
7078 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
0027+ |
DIP-8 |
6000 |
絕對(duì)原裝自己現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
24+ |
DIP-8 |
4650 |
詢價(jià) | |||
INTERSIL |
0027+ |
DIP-8 |
8 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
Harris |
97 |
3 |
公司優(yōu)勢庫存 熱賣中!! |
詢價(jià) | |||
HARRIS |
23+ |
DIP-8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INTERSIL |
23+ |
DIP-8 |
1002 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
HARRIS |
2016+ |
DIP8P |
6523 |
只做原裝正品現(xiàn)貨!或訂貨! |
詢價(jià) | ||
HAR |
22+ |
DIP8 |
14008 |
原裝正品 |
詢價(jià) |
