H5TQ2G83GFR-RDI中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? VDD=VDDQ=1.5V +/- 0.075V

? Fully differential clock inputs (CK, CK) operation

? Differential Data Strobe (DQS, DQS)

? On chip DLL align DQ, DQS and DQS transition with CK

transition

? DM masks write data-in at the both rising and falling

edges of the data strobe

? All addresses and control inputs except data,

data strobes and data masks latched on the

rising edges of the clock

? Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13

and 14 supported

? Programmable additive latency 0, CL-1, and CL-2

supported

? Programmable CAS Write latency (CWL) = 5, 6, 7, 8

9 and 10

? Programmable burst length 4/8 with both nibble

sequential and interleave mode

? BL switch on the fly

? 8banks

? Average Refresh Cycle (Tcase 0 oC~ 95 oC)

- 7.8 μs at 0oC ~ 85 oC

- 3.9 μs at 85oC ~ 95 oC

Commercial Temperature( 0oC ~ 95 oC)

Industrial Temperature( -40oC ~ 95 oC)

? JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)

? Driver strength selected by EMRS

? Dynamic On Die Termination supported

? Asynchronous RESET pin supported

? ZQ calibration supported

? TDQS (Termination Data Strobe) supported (x8 only)

? Write Levelization supported

? 8 bit pre-fetch