H28F008SC-V中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Smart 5 technology

– 5 V VCC

– 5 V or 12 V VPP

? High performance read access time

LH28F008SC-V85/SCH-V85

– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)

LH28F008SC-V12/SCH-V12

– 120 ns (5.0±0.5 V)

? Enhanced automated suspend options

– Byte write suspend to read

– Block erase suspend to byte write

– Block erase suspend to read

? Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

– Block erase/byte write lockout during power

transitions

? SRAM-compatible write interface

? High-density symmetrically-blocked architecture

– Sixteen 64 k-byte erasable blocks

? Enhanced cycling capability

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

? Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC

in static mode

? Automated byte write and block erase

– Command user interface

– Status register

? ETOXTM* V nonvolatile flash technology

? Packages

– 40-pin TSOP Type I (TSOP040-P-1020)

Normal bend/Reverse bend

– 44-pin SOP (SOP044-P-0600)

– 48-ball CSP (FBGA048-P-0608)

* ETOX is a trademark of Intel Corporation.