GVT71512C18中文資料賽普拉斯數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Features

? Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns

? Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz

? Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns

? Optimal for performance (two cycle chip deselect, depth expansion without wait state)

? 3.3V –5 and +10 power supply

? 3.3V or 2.5V I/O supply

? 5V tolerant inputs except I/Os

? Clamp diodes to VSS at all inputs and outputs

? Common data inputs and data outputs

? Byte Write Enable and Global Write control

? Multiple chip enables for depth expansion: three chip enables for TA(GVTI)/A(CY) package version and two chip enables for B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package versions

? Address pipeline capability

? Address, data and control registers

? Internally self-timed Write Cycle

? Burst control pins (interleaved or linear burst sequence)

? Automatic power-down for portable applications

? JTAG boundary scan for B and T package version

? Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages