GTVA262711FA-V2-R0分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

GTVA262711FA-V2-R0屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產(chǎn)的GTVA262711FA-V2-R0晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input matched

? Typical pulsed CW performance: 10 μs pulse

width, 10 duty cycle, 2690 MHz, 48 V

- Output power at P3dB = 300 W

- Efficiency = 62

- Gain = 19.1 dB

? Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

? Capable of handling 10:1 VSWR @48 V, 70 W (CW)

output power

? Pb-free and RoHS-compliant