零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
GT451 | Disc Ceramic Capacitors -GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads | MALLORYMallory Sonalert Products Inc. 馬洛里 | MALLORY | |
GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,5.0-20.0GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,5-20GHz | Hittite Hittite Microwave Corporation | Hittite | ||
Point-to-PointRadios | MICROSS Micross Components | MICROSS | ||
GAASPHEMTMMICMEDIUMPOWERAMPLIFIER | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
VoltageVariableAttenuator | MINI Mini-Circuits | MINI | ||
VoltageVariableAttenuator | MINI Mini-Circuits | MINI | ||
1/2WATTMETAL | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
GaAsDC-6GHzSP4TSwitch Description TheHWS451isaGaAsPHEMTMMICSP4TswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS451featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b/ | HWHexawave, Inc 漢威光電股份有限公司 | HW | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNEPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
LF451Wide-BandwidthJFET-InputOperationalAmplifier | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC | ||
LF451Wide-BandwidthJFET-InputOperationalAmplifier | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC |
詳細參數(shù)
- 型號:
GT451
- 制造商:
Cornell Dubilier Electronics
- 功能描述:
Cap Ceramic 51pF 3000V SL 5%(10 X 6mm) Radial 9.5mm 85°C
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ISSI |
1815+ |
MSOP8 |
6528 |
只做原裝正品現(xiàn)貨!或訂貨,假一賠十! |
詢價 | ||
GT |
23+ |
SOP8 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
GT |
2020+ |
MSOP8 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
GT |
23+ |
TSSOP8 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
GT |
21+ |
SOP8 |
200 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
GT |
19+ |
SOP-8 |
1214 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ISSI |
21+ |
MSOP8 |
8000 |
全新原裝 公司現(xiàn)貨 價格優(yōu) |
詢價 | ||
GT |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
GT |
2022 |
SOP-8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
GT |
23+ |
SOP8 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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