GRM21BR61H475KE51電容器的陶瓷電容器規(guī)格書PDF中文資料

Features

? 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs

? 40 V absolute maximum output supply voltage

? ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current

? Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver

? Adjustment pins for parameter configuration from input side

? Precise VCEsat detection (DESAT) with fault output and adjustable filter time and leading edge blanking time

with resistor at ADJB pin

? Adjustable IGBT soft turn-off after desaturation detection with resistor at ADJA pin

? Operation at high ambient temperature up to 125 °C with over-temperature shut down at 160 °C (±10 °C)

? Tight IC-to-IC propagation delay matching (tPDD,max = 30 ns)

? Undervoltage lockout protection with hysteresis for input and output side with active shut-down

? High common-mode transient immunity CMTI = 200 kV/μs

? Small space-saving DSO-16 fine-pitch package with large creepage distance (>8 mm)

? Safety certification

- UL 1577 recognized (planned) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s

- IEC 60747-17/VDE 0884-11 approval (planned) with VIORM = 1.4 kV (peak, reinforced)

? Evaluation board available EVAL-1ED3491MX12M

Potential applications

? Industrial motor drives - compact, standard, premium, servo drives

? Solar inverters

? UPS systems

? Welding

? Commercial and agricultural vehicles (CAV)

? Commercial air-conditioning (CAC)

? High-voltage isolated DC-DC converters

? Isolated switch mode power supplies (SMPS)