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GQM2195C2E1R3BB12

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ?Highterminalimpedancesforoptimalbroadbandperformance ?Advancedhighperformancein--packageDoherty ?AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E220GB12D

N--Channel Enhancement--Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E30GB12D

Airfast RF Power GaN Transistor

1Generaldescription This85WasymmetricalDohertyRFpowerGaNtransistorisdesignedforcellularbasestationapplicationsrequiringverywideinstantaneousbandwidthcapabilitycoveringthefrequencyrangeof1930to1995MHz. Thispartischaracterizedandperformanceisguaranteedforap

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E33GB12D

Airfast RF Power GaN Transistor

1Generaldescription This85WasymmetricalDohertyRFpowerGaNtransistorisdesignedforcellularbasestationapplicationsrequiringverywideinstantaneousbandwidthcapabilitycoveringthefrequencyrangeof1930to1995MHz. Thispartischaracterizedandperformanceisguaranteedforap

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E3R0BB12D

N--Channel Enhancement--Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E5GB12D

Airfast RF Power GaN Transistor

1Generaldescription This85WasymmetricalDohertyRFpowerGaNtransistorisdesignedforcellularbasestationapplicationsrequiringverywideinstantaneousbandwidthcapabilitycoveringthefrequencyrangeof1930to1995MHz. Thispartischaracterizedandperformanceisguaranteedforap

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E5R1BB12D

N--Channel Enhancement--Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E7R5BB12D

N--Channel Enhancement--Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E8R2BB12D

Airfast RF Power GaN Transistor

This24dBmRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof2496to2690MHz. Features ?Highterminalimpedancesforoptimalbroadbandperformance ?Designedforlowcomplexitylinearizationsystems ?Universalbroadbanddriver ?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

GQM2195C2E8R2BB12D

N--Channel Enhancement--Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

詳細參數(shù)

  • 型號：

    GQM219

  • 功能描述：

    多層陶瓷電容器MLCC - SMD/SMT 0805 15pF 100volts C0G 5%

  • RoHS：

    否

  • 制造商：

    American Technical Ceramics(ATC)

  • 電容：

    10 pF

  • 容差：

    1 %

  • 電壓額定值：

    250 V

  • 溫度系數(shù)/代碼：

    C0G(NP0) 外殼代碼 -

  • in：

    0505 外殼代碼 -

  • mm：

    1414

  • 工作溫度范圍：

    - 55 C to + 125 C

  • 產(chǎn)品：

    Low ESR MLCCs

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
muRata/村田
2022+
0805
7600
原廠原裝,假一罰十
 詢價
MURATA/村田
2022+
SMD
112000
原廠代理 終端免費提供樣品
 詢價
MURATA
24+
SMD
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
MURATA
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
MURATA
1844+
NA
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
MURATA/村田
24+
65200
詢價
MURATA/村田
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MURATA/村田
2020+
NA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
MURATA/村田
2023+
SMD
47870
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
muRata
17+
SMD
100000
原裝正品現(xiàn)貨
 詢價
更多GQM219供應(yīng)商 更新時間2025-4-17 10:38:00

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